Different isotopes may exhibit different resistance against the displacement damage induced by neutron radiations. To examine the difference in silicon isotopes, we calculate the damage functions of ²⁸Si, ²⁹Si, ³⁰Si and the natural silicon under intermediate neutron (10⁻⁶–0.1 MeV) and fast neutron (>0.1 MeV) radiations based on radiation damage theory and the Neutron Nuclear Reaction Evaluation Database (ENDF/B-VIII.0). Their accumulative displacement per atom (DPA) values under the neutron radiation of nuclear accident emergency response or cosmic space are also investigated. The calculated radiation damage functions and DPAs indicate that ³⁰Si endures at least 10–15% less displacement damage compared with ²⁸Si, ²⁹Si and the natural silicon under intermediate and fast neutron radiations. Therefore, we propose to use ³⁰Si-enriched silicon in semiconductor devices to enhance the neutron radiation resistance and extend the service life in radiative circumstances.

不同的同位素可能对中子辐射引起的位移损伤表现出不同的抵抗力。为了检查硅同位素的差异，我们基于辐射损伤计算了²⁸ Si，²⁹ Si，³⁰ Si和天然硅在中间中子（10 ^-6 –0.1 MeV）和快中子（> 0.1 MeV）辐射下的损伤函数理论和中子核反应评价数据库（ENDF / B-VIII.0）。还研究了它们在核事故应急响应或宇宙空间的中子辐射下的每原子累积位移（DPA）值。计算出的辐射损伤函数和DPA表明，与Si相比，³⁰ Si的位移损伤至少少10–15％²⁸ Si，²⁹ Si和天然硅在中等和快速中子辐射下。因此，我们建议在半导体器件中使用³⁰种富含Si的硅，以增强中子的抗辐射性，并延长在辐射环境下的使用寿命。