Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process,Crystal Research and Technology

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Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2021-01-06 , DOI: 10.1002/crat.202000180
Wenjia Su ₁ , Wei Yang ₁ , Jiulong Li ₁ , Xiaomin Han ₁ , Junfeng Wang ₁

Affiliation

2D global transient model for generation‐six (G6) GT‐style furnace and upgraded generation‐seven (G7) ALD‐style furnace in which all types of heat transfer and flow are included is established to investigate the thermal field, melt convection, melt–crystal (m–c) interface shape, thermal stress, growth rate, and Voronkov ratios in the growing silicon ingot. The modeling is verified by the heater power and temperature experiment. Simulation results show that the melt flow is relatively stronger as the furnace upgrades. For G7, a relatively higher thermal stress and growth rate are found due to the higher temperature gradient both in the horizontal and axial directions. Furthermore, unlike the optimized G6, G7 shows the overly convex m–c interface in the initial stage and edge nucleation throughout crystal growth stage.

中文翻译：

硅定向凝固过程中热区升级的数值研究

建立了第六代（G6）GT型熔炉和升级后的第七代（G7）ALD型熔炉的二维全局瞬态模型，其中包括所有类型的热传递和流动，以研究热场，熔体对流，熔体生长的硅锭中的–晶体（m–c）界面形状，热应力，生长速率和沃龙科夫比。通过加热器功率和温度实验验证了该模型。仿真结果表明，随着熔炉升级，熔体流动相对更强。对于G7，由于在水平和轴向方向上的温度梯度都较高，因此发现相对较高的热应力和增长率。此外，与优化的G6不同，G7在初始阶段显示出过度凸出的m–c界面，在整个晶体生长阶段显示出边缘成核。

更新日期：2021-02-11

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