Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film,Advanced Electronic Materials

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Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-01-06 , DOI: 10.1002/aelm.202000973
Gergely Tarsoly ₁ , Youngill Choi ₁ , Young Gyu You ₂ , Sung Ho Jhang ₂ , Seungmoon Pyo ₁

Affiliation

Most organic thin film‐based phototransistors exhibit an increase in current under illumination owing to the trapped photogenerated minority charge carriers, which enhance the accumulation of majority carriers in the semiconductor layer of the device. Recent research reveals that, on employing a unique active layer structure, phototransistor devices exhibit abnormal photoresponse behaviors under certain conditions: hole‐dominated current decreases under illumination and shows an anomalous dependence on irradiance. The current decreases with increasing irradiance. When the irradiance is increased further, a moderate current increase is observed. Under a constant negative bias, when a discrete light pulse is turned on, the current decreases sharply and then slowly increases to saturation in the beginning and it starts to increase when illumination is ceased. These anomalies are analyzed, and the changes in current are modeled using a mathematical model based on the simultaneous trapping and release of both photogenerated holes and electrons.

中文翻译：

基于C8-BTBT薄膜中嵌入的PTCDI-C5晶体的双极型光电晶体管在照明下的异常电流减少

由于捕获的光生少数电荷载流子的存在，大多数基于有机薄膜的光电晶体管在光照下电流会增加，从而增强了器件半导体层中多数载流子的积累。最近的研究表明，在采用独特的有源层结构时，光电晶体管器件在某些条件下会表现出异常的光响应行为：空穴主导的电流在光照下会减少，并显示出对辐照度的异常依赖性。电流随着辐照度的增加而减小。当辐照度进一步增加时，观察到适度的电流增加。在恒定的负偏压下，当打开离散光脉冲时，电流急剧下降，然后在开始时缓慢增加到饱和，并且在停止照明时开始增加。分析这些异常，并使用基于同时捕获和释放光生空穴和电子的数学模型对电流变化进行建模。

更新日期：2021-02-15

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