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Effects of substrate annealing on uniaxial magnetic anisotropy and ferromagnetic resonance frequency of Ni80Fe20 films deposited on self-organized periodically rippled sapphire substrates
Vacuum ( IF 3.8 ) Pub Date : 2021-01-07 , DOI: 10.1016/j.vacuum.2021.110047
Xu Xu , Lichuan Jin , Tianlong Wen , Yulong Liao , Xiaoli Tang , Huaiwu Zhang , Zhiyong Zhong

Ni80Fe20 (NiFe) films have been deposited on self-organized sapphire substrates with periodical surface ripples formed by 2–10 h thermal annealing at 1400°C. By extracting static and dynamic magnetic parameters from magneto-optical Kerr effect (MOKE) loops and ferromagnetic resonance (FMR) spectra, we quantified and analyzed the substrate annealing effects on the induced in-plane uniaxial magnetic anisotropy and ferromagnetic resonance frequency in these films. The study demonstrates that the uniaxial anisotropy of these NiFe films is strongly related to the annealing-time dependent substrate faceting and coarsening mechanisms. The uniaxial anisotropy field Hu changes from ~170 Oe to ~250Oe, and the maximum value of it is obtained in film on 8-h annealed substrate. The ferromagnetic resonance response and high frequency characteristics of films can be modulated by self-organized substrate is also confirmed. When external magnetic field is parallel to the direction of ripple, the ferromagnetic resonance frequency of films grown on the self-organized substrates is increased by ~0.31 GHz compared with that of reference film on plane substrate. This work would be helpful to design the high frequency properties of spintronic devices and micro-wave magnetic devices by utilizing self-organized substrates.



中文翻译:

衬底退火对自组织周期性波纹蓝宝石衬底上沉积的Ni 80 Fe 20薄膜的单轴磁各向异性和铁磁共振频率的影响

Ni 80 Fe 20(NiFe)膜已沉积在自组织的蓝宝石衬底上,并在1400°C的温度下进行2-10 h的热退火而形成周期性的表面波纹。通过从磁光克尔效应(MOKE)环路和铁磁共振(FMR)光谱中提取静态和动态磁参数,我们量化并分析了基板退火对这些薄膜中所感应的面内单轴磁各向异性和铁磁共振频率的影响。研究表明,这些NiFe薄膜的单轴各向异性与退火时间相关的基片刻面和粗化机制密切相关。单轴各向异性场Hü170 大江250大江,其最大值是在8小时退火的基板上的薄膜中获得的。还证实了膜的铁磁共振响应和高频特性可以通过自组织衬底来调节。当外部磁场平行于波纹方向时,在自组织衬底上生长的薄膜的铁磁共振频率会增加0.3-1个 GHz的与平面基板上的参考膜相比。这项工作将有助于利用自组织衬底设计自旋电子器件和微波磁性器件的高频特性。

更新日期:2021-01-18
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