In this work, we have investigated theoretically the impact of intense laser, electric and magnetic fields on the linear and nonlinear optical properties of a quantum well heterostructure containing triple parabolic barriers (GaAs/AlGaAs). Within the framework of the effective-mass and parabolic band approximations, we have computed the confined lowest energy levels and their corresponding densities of probability, through the use of a finite difference technique to solve the corresponding differential equation. Besides, we evaluate the total optical absorption (TOACs) and relative refractive index change (RRICs) coefficients. The obtained findings show that an increase of the intensity of the intense laser field produces a blue shift at first and then a red shift of the TOACs and RRICs. A specific value of the laser field separating the two kinds of signal displacements is outlined. Contrarily to the intense laser field, an increment of the external static electric and magnetic fields induces only a blue shift in the variation of the TOACs and RRICs. In addition, we have discussed in detail the variation of diagonal and non-diagonal matrix elements which are responsible on the variation of the amplitudes of the TOACs and RRICs. We think that the obtained results can be useful in the design of new device's generation employed in optoelectronic domain.

在这项工作中，我们从理论上研究了强激光，电场和磁场对包含三重抛物面势垒（GaAs / AlGaAs）的量子阱异质结构的线性和非线性光学特性的影响。在有效质量和抛物线近似的框架内，我们已经通过使用有限差分技术来求解相应的微分方程，来计算了受限的最低能级及其相应的概率密度。此外，我们评估了总光吸收（TOAC）和相对折射率变化（RRIC）系数。获得的发现表明，强激光场强度的增加首先使TOAC和RRIC发生蓝移，然后产生红移。概述了分离两种信号位移的激光场的特定值。与强激光场相反，外部静电场和磁场的增加仅引起TOAC和RRIC的变化产生蓝移。另外，我们已经详细讨论了对角和非对角矩阵元素的变化，这些变化与TOAC和RRIC的幅度变化有关。我们认为，所获得的结果可用于设计在光电领域中使用的新一代设备。我们已经详细讨论了对角和非对角矩阵元素的变化，这些变化与TOAC和RRIC的幅度变化有关。我们认为，所获得的结果可用于光电领域中新一代设备的设计。我们已经详细讨论了对角和非对角矩阵元素的变化，这些变化与TOAC和RRIC的幅度变化有关。我们认为，所获得的结果可用于设计在光电领域中使用的新一代设备。