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Design and simulation of Sb2S3 solar cells based on monolayer graphene as electron transport layer
Optical Materials ( IF 3.9 ) Pub Date : 2021-01-07 , DOI: 10.1016/j.optmat.2020.110791
Guijin Li , Fangfang Guo , Xilin Zhou , Li Xue , Xiaohua Huang , Youpeng Xiao

In Sb2S3 solar cells, the p-n junction are generally formed by combination of p-type Sb2S3 absorber layer and n-type materials, such as CdS and TiO2. In this study, the design and simulation of the Sb2S3 solar cells with graphene as electron transport layer were performed. The device performance parameters with respect to the electron affinity of monolayer graphene, the doping concentration, thickness and bulk defect density of Sb2S3 layer were examined and optimized. The simulation results revealed that the performance of Sb2S3 solar cells could be improved by using a monolayer graphene with lower value of electron affinity. The optimum doping concentration of Sb2S3 absorber layer was found to be 1017 cm−3. Also, the optimum Sb2S3 absorber layer thickness was found to be 0.7 μm when the bulk defect density and the corresponding carrier diffusion length were 1015 cm−3 and 1.6 μm, respectively. According to the optimum values of different variables, the conversion efficiency of the Sb2S3 solar cells could be achieved as high as 23.30%. These results showed that the monolayer graphene could be served as an efficient and inexpensive electron transport layer.



中文翻译:

基于单层石墨烯作为电子传输层的Sb 2 S 3太阳能电池的设计与仿真

在Sb 2 S 3太阳能电池中,pn结通常由p型Sb 2 S 3吸收剂层和n型材料如CdS和TiO 2组合形成。在这项研究中,进行了以石墨烯为电子传输层的Sb 2 S 3太阳能电池的设计和仿真。针对单层石墨烯的电子亲和力,Sb 2 S 3层的掺杂浓度,厚度和体缺陷密度,对器件性能参数进行了检查和优化。仿真结果表明,Sb 2 S 3的性能通过使用具有较低电子亲和力的单层石墨烯可以改善太阳能电池。发现Sb 2 S 3吸收层的最佳掺杂浓度为10 17  cm -3。另外,当体缺陷密度和相应的载流子扩散长度分别为10 15 cm -3和1.6μm时,发现最佳的Sb 2 S 3吸收体层厚度为0.7μm。根据不同变量的最佳值,Sb 2 S 3的转化效率 太阳能电池可以达到高达23.30%。这些结果表明,单层石墨烯可以用作有效且廉价的电子传输层。

更新日期:2021-01-07
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