This manuscript reports two new designs of dual delay cells based on inversion mode MOS (I-MOS) and accumulation mode MOS (A-MOS) varactor for low power and wide tuning range differential ring voltage controlled oscillator (VCO). The new designs obtained a large tuning range by varying the capacitance of the delay stages. The change in capacitance across I-MOS and A-MOS varactor are obtained by varying the gate control voltage (V_g). The proposed VCO circuits are simulated in 0.18 µm CMOS process with a supply voltage (V_dd) of 1.8 V. The tuning ranges of VCO-I (with I-MOS varactor) and VCO-II (based on A-MOS varactor) vary from 1.697–0.714 GHz (81.54%) and 2.019–0.874 GHz (79.15%), whereas their power consumption vary from 4.347–3.507 mW and 3.713–3.063 mW respectively, by modulation of control voltage (V_c) from 0 V to 1 V. The phase noise of ring VCO-I and VCO-II is −103.1 dBc/Hz and −101.2 dBc/Hz at 1 MHz offset from 1.270 GHz and 1.516 GHz central frequency respectively. The figure of merit (FoM) of the VCO-I and VCO-II is −158.92 dBc/Hz and −159.32 dBc/Hz respectively and acquires an area of 0.381 mm².

该手稿报告了两种新的双延迟单元设计，它们基于反相模式MOS（I-MOS）和累积模式MOS（A-MOS）变容二极管，用于低功耗和宽调谐范围的差分环压控振荡器（VCO）。新设计通过改变延迟级的电容来获得较大的调谐范围。I-MOS和A-MOS变容二极管两端电容的变化是通过改变栅极控制电压（V _g）获得的。拟议的VCO电路在0.18 µm CMOS工艺中以电源电压（V _dd）的1.8V。VCO-I（使用I-MOS变容二极管）和VCO-II（基于A-MOS变容二极管）的调谐范围在1.697–0.714 GHz（81.54％）和2.019–0.874 GHz（79.15％）之间变化，而通过从0 V到1 V的控制电压（V _c）调制，它们的功耗分别在4.347–3.507 mW和3.713–3.063 mW之间变化。环VCO-I和VCO-II的相位噪声为-103.1 dBc分别从1.270 GHz和1.516 GHz中心频率偏移1 MHz时的/ Hz和-101.2 dBc / Hz。VCO-I和VCO-II的品质因数（FoM）分别为-158.92dBc / Hz和-159.32dBc / Hz，并且获得0.381mm ²的面积。