Recent studies have indicated that that the application of nickel oxide (NiO) regulator nano-films is growing. The sol-gel method has become the primary method for preparing NiO thin films. This paper describes a method to achieve optimum NiO thin films through this method. Nanostructured NiO nanoparticle (NP) films were successfully fabricated using the sol-gel method at different annealing temperatures as a photosensor device. This was carried out using a systematic change of parameters, such as the thermal annealing, to study the effect on the size of the metal oxide nanoparticles. The optical, structural and electrical properties of NiO nanoparticle films were characterised by ultraviolet-visible (UV-visible) and X-ray diffraction analyses. The results show that the films exhibit an average grain size depending on the annealing temperature. The optical properties revealed that the deposited films were p-type, and increasing the annealing temperatures leads to a shift in the maximum value of the absorption peak towards long wavelengths (red). This results in a drop in the energy gap as the annealing temperature increases. The voltage-current characteristics for both types of NiO/p-Si heterojunction (dark and illuminated) were investigated as a function of the annealing temperature. This study demonstrated that the best-estimated structural, optical, and electrical characterisations were achieved with NiO films at 650 °C.

最近的研究表明，氧化镍（NiO）调节剂纳米膜的应用正在增长。溶胶-凝胶法已成为制备NiO薄膜的主要方法。本文介绍了一种通过这种方法获得最佳NiO薄膜的方法。使用溶胶-凝胶法在不同的退火温度下成功地制备了纳米结构的NiO纳米颗粒（NP）薄膜作为光敏器件。这是使用系统的参数变化（例如热退火）进行的，以研究对金属氧化物纳米粒子尺寸的影响。NiO纳米粒子薄膜的光学，结构和电性能通过紫外可见（UV-visible）和X射线衍射分析进行了表征。结果表明，膜表现出取决于退火温度的平均晶粒尺寸。光学性质表明，沉积的膜是p型的，退火温度的升高导致吸收峰的最大值向长波长（红色）偏移。随着退火温度的升高，这导致能隙的减小。研究了两种类型的NiO / p-Si异质结（暗和亮）的电压-电流特性随退火温度的变化。这项研究表明，使用NiO薄膜在650°C时可获得最佳估计的结构，光学和电学特性。随着退火温度的升高，这导致能隙的减小。研究了两种类型的NiO / p-Si异质结（暗和亮）的电压-电流特性随退火温度的变化。这项研究表明，使用NiO薄膜在650°C时可获得最佳估计的结构，光学和电学特性。随着退火温度的升高，这导致能隙的减小。研究了两种类型的NiO / p-Si异质结（暗和亮）的电压-电流特性随退火温度的变化。这项研究表明，使用NiO薄膜在650°C时可获得最佳估计的结构，光学和电学特性。