This paper presents design and optimization of a bridge-type RF MEMS switch with and without perforations having non-uniform meanders for applications in the low-frequency (X-band) range. The CPW length of proposed switch is taken as 803 μm and has a signal line, an activated beam and a gap between these two components of 1 μm, these dimensions are taken using the optimization process. The choice of material characterized the performance of the switch by the ASBYS approach. The material for selecting the beam is taken as gold because it has high thermal conductivity, and Si₃N₄ as a dielectric and these two factors increase the switching efficiency of the switch. The electromechanical analysis is performed using COMSOL software to simulate all switching parameters. The meanders and perforations are incorporated and to reduce the pull-in voltage of the switch is 4.9 V with a fast switching time of 0.03 μs. The Capacitance analysis is an important key parameter for the switch the UP state and downstate capacitances are having 1.27 fF, 6.72 pF. The RF- performance is analyzed in HFSS software. The switch without perforations having a return loss is − 30.67 dB, insertion loss − 0.07 dB and isolation − 19.46 dB, and also with perforations of the switch having return loss, insertion loss are − 37.53 dB, − 0.076 dB, and this switch shows high isolation − 22.55 dB, from 8 to 12 GHz. By comparing these two, the perforated switch given good results. This Optimized bridge type RF MEMS switch is used for low frequencies like X-band applications.

本文介绍了在低频（X波段）范围内应用的，具有和不具有穿孔且具有不均匀弯曲的桥式RF MEMS开关的设计和优化。建议开关的CPW长度为803μm，并具有信号线，激活的光束以及这两个组件之间的1μm的间隙，这些尺寸是使用优化过程确定的。材料的选择通过ASBYS方法表征了交换机的性能。选择光束的材料取为金，因为它具有很高的热导率和Si ₃ N _4。作为电介质，这两个因素提高了开关的开关效率。机电分析使用COMSOL软件进行，以模拟所有开关参数。并入了曲折和穿孔，以降低开关的引入电压为4.9 V，快速开关时间为0.03μs。电容分析是开关的重要关键参数，UP状态和DOWN状态的电容分别为1.27 fF，6.72 pF。在HFSS软件中分析RF性能。没有穿孔的开关的回波损耗为− 30.67 dB，插入损耗为− 0.07 dB，隔离度为− 19.46 dB，带有穿孔的开关的回波损耗为− 37.53 dB，−0.076 dB，该开关表示高隔离度-22.55 dB，从8到12 GHz。比较这两个 穿孔开关效果很好。该优化的桥式RF MEMS开关用于X波段应用等低频。