In this paper, we reported a different approach to measure residual stress state in YBa 2 Cu 3 O 7− x (YBCO) films using Raman spectroscopy. YBCO thin films with the thicknesses of approximately 500 nm were synthesized on LaAlO 3 (LAO) and SrTiO 3 (STO) substrates using the Trifluoroacetate-organometallic deposition technology (TFA-MOD). A linear relationship was observed between the Raman peak shift and residual stress. Moreover, it was noted that, as for free-standing YBCO and YBCO thin film, a linear relationship was obtained between the Raman peak shift $$\Delta \omega$$ Δ ω , the residual stress σ , and the stress factor k = 179.3 (cm Mpa), i.e., $$\sigma = 179.3 \times \Delta \omega \,(Mpa)$$ σ = 179.3 × Δ ω ( M p a ) . It is found that this method allowed the residual stress of YBCO thin films to be directly measured using the Raman shift factor. This test method can be used for the rapid and non-destructive detection of residual stress in YBCO films.

中文翻译：

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通过拉曼光谱测量 YBa2Cu3O7-x 薄膜中的残余应力

在本文中，我们报道了一种使用拉曼光谱测量 YBa 2 Cu 3 O 7- x (YBCO) 薄膜中残余应力状态的不同方法。使用三氟乙酸盐-有机金属沉积技术 (TFA-MOD) 在 LaAlO 3 (LAO) 和 SrTiO 3 (STO) 衬底上合成了厚度约为 500 nm 的 YBCO 薄膜。在拉曼峰位移和残余应力之间观察到线性关系。此外，注意到对于独立的 YBCO 和 YBCO 薄膜，拉曼峰位移 $$\Delta \omega$$ Δ ω 、残余应力 σ 和应力因子 k = 179.3 (cm Mpa)，即 $$\sigma = 179.3 \times \Delta \omega \,(Mpa)$$ σ = 179.3 × Δ ω ( M pa ) 。发现该方法允许使用拉曼位移因子直接测量YBCO薄膜的残余应力。该测试方法可用于YBCO薄膜残余应力的快速无损检测。