We report the enhanced performance of near-ultraviolet (NUV) InGaN/GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with a staircase hole injector (SHI). Simulation results indicate that the internal electrostatic field in the QW of the LED-SHI is decreased owing to the reduced sheet charge density at the interface between QW and quantum barrier (QB) caused by the smaller In content difference. Additionally, the SHI structure in the QBs suppresses the ballistic or quasi-ballistic hole transport, thus enhancing efficient hole injection into the QWs. The radiative output power of an LED-SHI is increased by 25.3% at 300 mA over that of conventional LEDs with GaN QBs. The droop of internal quantum efficiency (IQE) an LED-SHI at 300 Acm⁻¹ is 6.1%, while the LED with GaN QBs has an IQE droop of 17.7%. The reduced IQE droop and increased radiative output power in the LED-SHI is attributed to the reduced hole overflow, increased hole injection into the MQW and the decreased electrostatic field in the MQWs. The results show that the SHI structure in the LED is promising for improved performance in high-power GaN-based NUV LEDs.

我们报告了具有阶梯式空穴注入器 (SHI) 的近紫外 (NUV) InGaN/GaN 多量子阱 (MQW) 发光二极管 (LED) 的增强性能。仿真结果表明，由于 In 含量差异较小导致 QW 和量子势垒 (QB) 之间界面处的薄层电荷密度降低，导致 LED-SHI 的 QW 中的内部静电场降低。此外，QB 中的 SHI 结构抑制了弹道或准弹道空穴传输，从而提高了空穴注入 QW 的效率。LED-SHI 的辐射输出功率在 300 mA 时比采用 GaN QB 的传统 LED 增加了 25.3%。LED-SHI 在 300 Acm ^-1下的内量子效率 (IQE) 下降为 6.1%，而采用 GaN QB 的 LED 的 IQE 下降为 17.7%。LED-SHI 中减少的 IQE 下降和增加的辐射输出功率归因于减少的空穴溢出、增加的空穴注入到 MQW 和减少的 MQW 中的静电场。结果表明，LED 中的 SHI 结构有望提高高功率 GaN 基 NUV LED 的性能。