In recent years, (Pb, La)(Zr, Sn, Ti)O₃ (PLZST)‐based antiferroelectric (AFE) materials are examined, and research demonstrates that the content of each material component has a significant impact on performance. However, a majority of investigations focus on a 2 mol% La content. Herein, PLZST AFE thick films with 6 mol% La content and a changed Zr/Ti ratio are prepared using the rolling process (RP). The results show that antiferroelectricity decreases with increasing Ti content. The forward and backward switching electric fields decrease linearly. Meanwhile, the hysteresis is only slightly reduced, maintaining a relatively small value. Images of the microstructure reveal that the RP is a helpful method for preparing dense materials. The breakdown at the edge of the electrode is the leading electric failure mode. As Ti content is increased, the temperature‐dependent dielectric permittivity relationship curves remain almost equidistant and shift to the left. Compared with the others, the 2 mol% Ti content sample exhibits a better discharge performance. However, owing to the limited breakdown electric field, the discharge behavior beyond the electric switching field strength cannot be observed, so a high electric switching field strength material with an excellent voltage resistance is needed for an outstanding discharge performance.

中文翻译：

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Zr / Ti比对（Pb，La）（Zr，Sn，Ti）O3反铁电厚膜结构和性能的影响的洞见

近年来，（Pb，La）（Zr，Sn，Ti）O ₃对基于（PLZST）的反铁电（AFE）材料进行了研究，研究表明，每种材料成分的含量都会对性能产生重大影响。但是，大多数研究集中在2摩尔％的La含量上。在此，使用压延工艺（RP）制备具有6mol％La含量和改变的Zr / Ti比的PLZST AFE厚膜。结果表明，随着铁含量的增加，反铁电性降低。正向和反向切换电场线性减小。同时，磁滞仅略微减小，保持相对较小的值。显微图像显示，RP是一种制备致密材料的有用方法。电极边缘的击穿是主要的电气故障模式。随着钛含量的增加，温度相关的介电常数关系曲线几乎保持等距并向左移动。与其他样品相比，Ti含量为2 mol％的样品表现出更好的放电性能。然而，由于有限的击穿电场，不能观察到超出电场强度的放电行为，因此需要具有优异耐压性的高电场强度材料以具有优异的放电性能。