A physics-based compact model for phase-change random access memory (PcRAM) was proposed considering the ratio of vertical-to-lateral crystal growth rate (α) and it was incorporated into HSPICE via Verilog-A. The proposed model was verified by using the experimental results taken from the 256 × 256 cross-point (X-point) PcRAM cell array with the Ge₂Sb₂Te₅ 2z-nm technology node. The proposed compact model successfully reproduced the measured PcRAM cell resistance (R_C) depending on the SET pulse width and amplitude after a background RESET, which is a challenging issue in the X-point PcRAM as the promising candidate for a modern storage-class memory in perspective of the write latency and power consumption, without heavy computational burden while capturing the essence of physical meaning via the multi-domain simulation which includes the threshold switching, electrical, thermal, and phase-change modules. Extracted α value was 1.55. Furthermore, it was found that the SET pulse-dependent abrupt/gradual change of R_C is sensitive to α. It suggests that α should be carefully optimized for the PCM-based neuromorphic applications.

提出了一种基于物理的紧凑型相变随机存取存储器（PcRAM）模型，该模型考虑了纵横晶体生长速率（α）的比率，并将其通过Verilog-A整合到HSPICE中。通过使用具有Ge ₂ Sb ₂ Te ₅ 2z-nm技术节点的256×256交叉点（X点）PcRAM单元阵列获得的实验结果验证了所提出的模型。所提出的紧凑模型成功地再现所测量的PCRAM单元电阻（R _{C ^}）取决于背景复位后的SET脉冲宽度和幅度，这在X点PcRAM中是一个具有挑战性的问题，从写延迟和功耗的角度来看，它是现代存储类存储器的有希望的候选者，而没有繁重的计算负担同时通过多域仿真（包括阈值切换，电，热和相变模块）捕获物理含义的本质。提取的α值为1.55。此外，发现R _C的SET脉冲相关的突变/逐渐变化对α敏感。这表明对于基于PCM的神经形态应用，应仔细优化α。