We report the band alignment parameters of ReS₂/BN van der Waals heterojunction where the ReS₂ and BN monolayer are grown by chemical vapor deposition (CVD). The determination of the band alignment has been carried out by X-ray photoelectron spectroscopy (XPS). With a type-I band alignment, the valence band offset (VBO) and conduction band offset (CBO) values are measured to be 2.79±0.24 eV and 1.76±0.24 eV, respectively. The results can offer a reference for the electric and photoelectric devices based on the ReS₂/BN heterojunction. In addition, the large VBO and CBO of this heterojunction make it a good choice for substrates and gate dielectrics of complementary metal oxide semiconductor (CMOS) transistors.

我们报告了ReS ₂ / BN van der Waals异质结的能带对准参数，其中ReS ₂和BN单层通过化学气相沉积（CVD）生长。带取向的确定已经通过X射线光电子能谱法（XPS）进行。使用I型能带对准时，价带偏移（VBO）和导带偏移（CBO）值分别被测量为2.79±0.24 eV和1.76±0.24 eV。研究结果可为基于ReS ₂ / BN异质结的电气和光电器件提供参考。此外，该异质结的大VBO和CBO使其成为互补金属氧化物半导体（CMOS）晶体管的衬底和栅极电介质的理想选择。