The synapses are essential to the brain neuromorphic system, and especially the plasticity of synapse contributes significantly in cognitive functions. Ferroelectric tunnel junction (FTJ) can be utilized to emulate the synaptic functions by the effective control of resistance state, which is related with the ferroelectric polarization state of barrier layer. Here, we study the emulation of a synaptic response in the fabricated organic ferroelectric tunnel junctions (OFTJs) with Polyvinylidene fluoride (PVDF) polymer barriers. The functions of long-term potentiation and long-term depression are demonstrated by exploring the relationship between resistance and polarizing pulse. In addition, our device can be also utilized to realize multi-memory function, a device with six-resistance states is demonstrated. Our results may provide a new degree of freedom for the realization of synaptic functions in OFTJs.

突触对大脑神经形态系统必不可少，尤其是突触的可塑性在认知功能中起着重要作用。铁电隧道结（FTJ）可通过有效控制电阻状态来模拟突触功能，而电阻状态与势垒层的铁电极化状态有关。在这里，我们研究了在聚偏氟乙烯（PVDF）聚合物势垒制造的有机铁电隧道结（OFTJs）中对突触响应的仿真。通过研究电阻和极化脉冲之间的关系，证明了长期增强和长期抑制的功能。此外，我们的器件还可用于实现多存储功能，并演示了具有六电阻状态的器件。