By using the theory of quasi-static electrodynamics and fluorescence resonance energy transfer (FRET), local dielectric constant-dependent fluorescence quenching of gold nanoshell has been studied. Because the bonding plasmon coupling mode has stronger resonance light absorption, the bonding plasmon coupling mode-induced FRET has a greater quenching efficiency than that of anti-bonding plasmon coupling mode. Both the bonding and anti-bonding plasmon coupling mode-induced fluorescence quenching are greatly dependent on the local dielectric constant. The quenching efficiency corresponding to anti-bonding plasmon coupling mode increases as the inner core dielectric constant is increased, whereas the quenching efficiency corresponding to bonding plasmon coupling mode increases as the outer surrounding dielectric constant is increased. The corresponding physical origin could be illustrated as follows. The anti-bonding and bonding plasmon coupling modes are primarily composed of the cavity and surface plasmon, respectively. As the result of the increasing outer surrounding/inner core dielectric constant-induced shifting and widening of bonding/anti-bonding plasmonic absorption peak, the corresponding wavelength region with high quenching efficiency value also red shifts and broadens as the dielectric constant of outer surrounding/inner core is increased. Thus, the fluorescence quenching efficiency of gold nanoshell could be fine tuned by altering the local dielectric environment.

利用准静态电动力学和荧光共振能量转移（FRET）理论，对金纳米壳的局部介电常数依赖性荧光猝灭进行了研究。因为键合等离子体激元耦合模式具有较强的共振光吸收，所以键合等离子体激元耦合模式引起的FRET具有比抗键等离子体激元耦合模式更高的猝灭效率。键和反键等离激元耦合模式诱导的荧光猝灭都极大地取决于局部介电常数。随着内芯介电常数的增加，对应于反键等离子体激元耦合模式的猝灭效率增加，而随着外围介电常数的增加，对应于键合等离子体激元耦合模式的猝灭效率增加。相应的物理原点可以说明如下。反键和键等离激元耦合模式主要由腔和表面等离激元组成。由于外围/内芯介电常数引起的位移增加以及键合/反键合等离子体吸收峰变宽的结果，具有高猝灭效率值的相应波长区域也随着外围/内芯的介电常数而红移并变宽。内核增加。因此，可以通过改变局部介电环境来微调金纳米壳的荧光猝灭效率。由于外围/内芯介电常数引起的位移增加以及键合/反键合等离子体吸收峰变宽的结果，具有高猝灭效率值的相应波长区域也随着外围/内芯的介电常数而红移并变宽。内核增加。因此，可以通过改变局部介电环境来微调金纳米壳的荧光猝灭效率。由于外围/内芯介电常数引起的位移增加以及键合/反键合等离子体吸收峰变宽的结果，具有高猝灭效率值的相应波长区域也随着外围/内芯的介电常数而红移并变宽。内核增加。因此，可以通过改变局部介电环境来微调金纳米壳的荧光猝灭效率。