Realization of Wafer‐Scale 1T‐MoS2 Film for Efficient Hydrogen Evolution Reaction,ChemSusChem

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Realization of Wafer‐Scale 1T‐MoS2 Film for Efficient Hydrogen Evolution Reaction
ChemSusChem ( IF 7.5 ) Pub Date : 2021-01-05 , DOI: 10.1002/cssc.202002578
Hyeong‐U. Kim ₁ , Mansu Kim ₂ , Hyunho Seok ₃ , Kyu‐Young Park ₄ , Ji‐Yun Moon ₅ , Jonghwan Park ₂ , Byeong‐Seon An ₆ , Hee Joon Jung _{4,

7} , Vinayak P. Dravid _{4,

7} , Dongmok Whang _{2,

3} , Jae‐Hyun Lee ₅ , Taesung Kim _{3,

8}

Affiliation

The octahedral structure of 2D molybdenum disulfide (1T‐MoS₂) has attracted attention as a high‐efficiency and low‐cost electrocatalyst for hydrogen production. However, the large‐scale synthesis of 1T‐MoS₂ films has not been realized because of higher formation energy compared to that of the trigonal prismatic phase (2H)‐MoS₂. In this study, a uniform wafer‐scale synthesis of the metastable 1T‐MoS₂ film is performed by sulfidation of the Mo metal layer using a plasma‐enhanced chemical vapor deposition (PE‐CVD) system. Thus, plasma‐containing highly reactive ions and radicals of the sulfurization precursor enable the synthesis of 1T‐MoS₂ at 150 °C. Electrochemical analysis of 1T‐MoS₂ shows enhanced catalytic activity for the hydrogen evolution reaction (HER) compared to that of previously reported MoS₂ electrocatalysts 1T‐MoS₂ does not transform into stable 2H‐MoS₂ even after 1000 cycles of HER. The proposed low‐temperature synthesis approach may offer a promising solution for the facile production of various metastable‐phase 2D materials.

中文翻译：

Wafer-Scale 1T-MoS2薄膜实现高效析氢反应的实现

二维二硫化钼（1T-MoS ₂）的八面体结构作为一种高效，低成本的制氢电催化剂备受关注。但是，由于与三棱柱相（2H）-MoS ₂相比具有更高的形成能，因此尚未实现1T-MoS ₂膜的大规模合成。在这项研究中，通过使用等离子增强化学气相沉积（PE-CVD）系统硫化钼金属层，对亚稳1T-MoS ₂薄膜进行了均匀的晶圆级合成。因此，含等离子体的高反应性离子和硫化前体的自由基能够在150°C的温度下合成1T-MoS ₂。1T-MoS _2的电化学分析示出了增强的相比于先前报道的MoS的析氢反应（HER）的催化活性_2个电催化剂1T-MOS ₂不变换成稳定的2H-MOS ₂即使在HER的1000个循环。拟议的低温合成方法可能为各种亚稳态2D材料的简便生产提供有希望的解决方案。

更新日期：2021-03-07

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