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Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment
Advanced Science ( IF 14.3 ) Pub Date : 2021-01-04 , DOI: 10.1002/advs.201903252
Yong Yan 1 , Shasha Li 1 , Juan Du 1, 2 , Huai Yang 3 , Xiaoting Wang 3 , Xiaohui Song 1 , Lixia Li 4 , Xueping Li 1 , Congxin Xia 1 , Yufang Liu 4 , Jingbo Li 5 , Zhongming Wei 3
Affiliation  

2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate‐induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs‐based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH‐FET is constructed as a gate‐controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near‐broken band alignment in the InSe/GeSe vdWH‐FET is a crucial feature for high‐performance reversible rectifier, which is shown to have backward and forward rectification ratio of 1:38 and 963:1, respectively. Being further explored as a new bridge rectifier, the InSe/GeSe device has great potential in future gate‐controllable alternating current/direct current convertor. These results indicate that 2D vdWHs with near‐broken band alignment can offer a pathway to simplify the commutating circuit and regulating speed circuit.

中文翻译:

基于近断带对准二维 InSe/GeSe 异质结构的可逆半波整流器

二维范德华异质结构 (vdWH) 为设计多功能电子设备提供了巨大的机会。由于二维材料的超薄特性,栅极引起的电荷密度变化使得振幅控制成为可能,从而创建了一种新的可编程单边整流器。基于二维 vdWHs 的可逆单边整流器的研究还很缺乏,尽管它可以为调制输出状态带来新的自由度。这里,InSe/GeSe vdWH-FET 被构造为栅极可控半波整流器。该装置具有从正向到反向整流性能的无级调节,从而导致输出电平的多种操作状态。InSe/GeSe vdWH-FET 中的近断带排列是高性能可逆整流器的一个关键特征,其后向和前向整流比分别为 1:38 和 963:1。InSe/GeSe器件作为一种新型桥式整流器正在被进一步探索,在未来门控交流/直流变换器中具有巨大的潜力。这些结果表明,具有近断带排列的二维 vdWH 可以提供简化换向电路和调节速度电路的途径。
更新日期:2021-02-17
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