The present work examines undoped and vanadium (V) doped cerium dioxide (CeO₂) thin films prepared by an automated spray pyrolysis technique. The doping concentrations are 2,4, 6, and 8 at.%. Various characterization techniques were carried out to investigate the vanadium effect on the structural as well as the optical properties of the CeO₂ films. The study also focused on inspecting the electrochemical characteristics of the CeO₂ thin layers. The X-ray diffraction (XRD) results showed the presence of a polycrystalline cubic phase of the fluorite type of the CeO₂ material, which is confirmed by results from Raman spectroscopy. The Scanning Electron Microscopy images showed that Vanadium doped films have excellent growth on the ITO substrate with a smooth surface. Optical analysis exhibits a decline in terms of the band gap value and the average transmittance within the visible range by increasing V doping proportions. Electrochemical properties were studied using cyclic voltammetry, which demonstrated that 4 at.% of V doped CeO₂ thin films exhibited an excellent capacity to insert and extract the Li⁺ ions. The pure CeO₂ film remained fully transparent after Li⁺insertion/disinsertion. These interesting results expand the field applications for this material, especially for electrochromic devices.

本工作研究了通过自动喷雾热解技术制备的未掺杂和钒掺杂的二氧化铈（CeO ₂）薄膜。掺杂浓度为2、4、6和8原子％。进行了各种表征技术以研究钒对CeO ₂薄膜的结构和光学性能的影响。该研究还集中于检查CeO ₂薄层的电化学特性。X射线衍射（XRD）结果表明存在萤石型CeO ₂的多晶立方相拉曼光谱法的结果证实了这种材料。扫描电子显微镜图像显示，掺杂钒的薄膜在具有平滑表面的ITO基板上具有出色的生长。光学分析显示，通过增加V掺杂比例，带隙值和可见光范围内的平均透射率都会下降。使用循环伏安法研究了电化学性质，该电化学性质证明了4 at。％的V掺杂CeO ₂薄膜表现出出色的插入和提取Li ⁺离子的能力。锂⁺之后纯的CeO ₂薄膜保持完全透明插入/分解。这些有趣的结果扩展了这种材料的现场应用，特别是对于电致变色器件。