Herein, we investigated the effect of organic solvent drop-casting and solvent vapour annealing (SVA) on the surface morphology of copper phthalocyanine (CuPc) and its effect on the transistor performance and contact resistance in organic field effect transistors (OFETs). Organic solvents: acetone and isopropyl alcohol (IPA) are used for drop-casting and SVA treatment of CuPc film. The morphology, crystallinity and optical properties of untreated and treated CuPc films are investigated through ultraviolet–visible (UV–Vis) absorption spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM). The results reveal that the crystallinity and grain size increases in CuPc film treated with SVA. Large grain size results less grain boundaries and forms better contact between source/drain (S/D) electrodes and organic layer. As a result, the SVA treated CuPc based OFETs shows one order increased charge carrier mobility and two order decreased contact resistance compared to that in untreated CuPc based OFET.

在本文中，我们研究了有机溶剂滴铸和溶剂蒸汽退火（SVA）对铜酞菁（CuPc）表面形态的影响及其对晶体管性能和有机场效应晶体管（OFET）中接触电阻的影响。有机溶剂：丙酮和异丙醇（IPA）用于CuPc膜的滴铸和SVA处理。通过紫外-可见（UV-Vis）吸收光谱，X射线衍射（XRD）和原子力显微镜（AFM）研究了未处理和已处理的CuPc膜的形态，结晶度和光学性质。结果表明，用SVA处理的CuPc膜的结晶度和晶粒尺寸增加。大晶粒尺寸导致较少的晶界，并在源/漏（S / D）电极和有机层之间形成更好的接触。结果是，