It is a big challenge to construct large-scale, high-resolution and high-performance inkjet-printed metal oxide thin film transistor (TFT) arrays with independent gates for the new printed displays. Here, a self-confined inkjet printing technology has been developed to construct large-area (64 × 64 array), high-resolution and high-performance metal oxide bilayer (In₂O₃/IGZO) heterojunction TFTs with independent bottom gates on transparent glass substrates. Inkjet printing In₂O₃ dot arrays with the diameters from 55 to 70 μm and the thickness of ∼10 nm were firstly deposited on UV/ozone treated AlO_x dielectric layers, and then IGZO dots were selectively printed on the top of In₂O₃ dots by self-confined technology to form In₂O₃/IGZO heterojunction channels. When the inkjet-printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films, the mobility of the resulting printed In₂O₃/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm² V⁻¹ s⁻¹ with excellent on/off ratios (>10⁸) and negligible hysteresis. Furthermore, the printed N-Metal-Oxide-Semiconductor (NMOS) inverter consisted of an In₂O₃/IGZO TFT and an IGZO TFT has been demonstrated, which show excellent performance with the voltage gain up to 112. The strategy demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates, circuits and display driving circuits.

为新型印刷显示器构造具有独立门的大规模，高分辨率和高性能喷墨印刷金属氧化物薄膜晶体管（TFT）阵列是一个巨大的挑战。在这里，已经开发出一种自封闭式喷墨打印技术来构造大面积（64×64阵列），高分辨率和高性能的金属氧化物双层（In ₂ O ₃ / IGZO）异质结TFT，其透明底面上具有独立的底栅玻璃基板。喷墨印刷直径为55至70μm，厚度约为10 nm的In ₂ O ₃点阵列首先沉积在经过UV /臭氧处理的AlO _x电介质层上，然后将IGZO点选择性地印刷在In ₂ O的顶部通过自限制技术将_3个点形成In ₂ O ₃ / IGZO异质结通道。当在印刷IGZO薄膜之前，用UV /臭氧处理喷墨印刷的IO层超过30分钟或用氧等离子体处理5分钟时，所得印刷的In ₂ O ₃ / IGZO异质结TFT的迁移率相应提高到18.80。和28.44 cm ² V ^-1 s ^-1，具有出色的开/关比（> 10 ⁸）和滞后可以忽略不计。此外，印刷的N-金属氧化物半导体（NMOS）逆变器由In ₂ O _3组成已经证明了/ IGZO TFT和IGZO TFT，它们在电压增益高达112时表现出出色的性能。这里展示的策略可视为实现新一代高性能印刷逻辑门，电路和显示器驱动的通用方法电路。