In this work, solution-processed indium oxide (In₂O₃) thin film transistors (TFTs) were fabricated by a two-step annealing method. The influence of post-metal annealing (PMA) temperatures on the electrical performance and stability is studied. With the increase of PMA temperatures, the on-state current and off-state current (I_on/I_off) ratio is improved and the sub-threshold swing (SS) decreased. Moreover, the stability of In₂O₃ TFTs is also improved. In all, In₂O₃ TFT with post-metal annealing temperature of 350°С exhibits the best performance (a threshold voltage of 4.75 V, a mobility of 13.8 cm²/V, an I_on/I_off ratio of 1.8 × 10⁶, and a SS of 0.76 V/decade). Meanwhile, the stability under temperature stress (TBS) and positive bias stress (PBS) also show a good improvement. It shows that the PMA treatment can effectively suppress the interface trap and bulk trap and result in an obviously improvement of the In₂O₃ TFTs performance.

在这项工作中，通过两步退火方法制造了固溶处理的氧化铟（In ₂ O ₃）薄膜晶体管（TFT）。研究了金属后退火（PMA）温度对电性能和稳定性的影响。随着PMA温度的升高，导通电流和截止状态电流（I _on / I _off）的比率得到改善，亚阈值摆幅（SS）减小。而且，In ₂ O ₃ TFT的稳定性也得到改善。总共In ₂ O ₃金属后退火温度为350°С的TFT表现出最佳性能（阈值电压为4.75 V，迁移率为13.8 cm ² / V，I _on / I _off比为1.8×10 ⁶且SS为0.76 V /十年）。同时，在温度应力（TBS）和正偏压应力（PBS）下的稳定性也显示出良好的改善。结果表明，PMA处理可以有效地抑制界面陷阱和体陷阱，并明显改善了In ₂ O ₃ TFT的性能。