State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS₂) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS₂/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.

最新的忆阻器主要由垂直金属-绝缘体-金属（MIM）结构形成，该结构依赖于导电丝的形成以进行电阻切换（RS）。然而，由于灯丝的随机形成，垂直MIM忆阻器的设置/复位电压难以控制，这导致时间和空间切换均匀性差。这里，基于电子束辐照的二硫化rh（ReS ₂）的实现，它揭示了一种基于肖特基势垒高度（SBH）调制的电阻切换机制。该器件具有无成形，稳定的渐进式RS特性，并且在正向和负向扫描期间同时实现了很小的转变电压变化（6.3％/ 5.3％）。RS归因于由器件中的电压偏置引起的硫空位的运动，其调制ReS ₂ /金属SBH。与基于MIM的忆阻器中的突变RS相比，渐进式SBH调制可稳定时间变化。此外，使用该设备演示了对生物突触的长期突触可塑性的仿真，显示了其作为节能型神经形态计算应用的人工突触的潜力。