A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

实现了双栅极InSb纳米片场效应器件，该器件用于研究窄带隙半导体InSb纳米片中的物理起源和自旋-轨道相互作用的可控性。我们证明，通过在双栅极上施加电压，可以有效地调节InSb纳米片中的自旋-轨道相互作用。我们还发现InSb纳米片在双栅电压为零时存在固有的自旋-轨道相互作用，并将其物理起源确定为器件层结构中的内置不对称性。在InSb纳米片中具有强大且可控的自旋-轨道相互作用可以简化自旋电子欺骗，基于自旋的量子设备和拓扑量子设备的设计和实现。