ABSTRACT

This paper presents design of an ultra-low-power two-stage Op-Amp and Second-generation current conveyor (CCII) using gm/$$I_D$$ technique for portable applications like biomedical instruments, wireless sensor networks (WSNs), etc. The designed circuits are based on 20 nm Tunnel Field-Effect Transistor (TFET). The circuits use a single power supply of $$+$$0.9 V and provide improvements in many areas when compared with Carbon Nanotube FET (CNTFET) based circuits and existing TFET based circuits. It has a thorough comparison of the performance characteristics with CNTFET based as well as TFET based circuits. The simulation set up in HSPICE, provide very low power consumption for the same performance, and provide much better performance for the same power consumption when compared with existing circuits. In the case of TFET based Op-Amp, for the power consumption of 47.1 $$\mu$$W, the GBW and open-loop DC gain are 5.12 MHz and 75.9 dB respectively. While for the power consumption of 107.1 $$\mu$$W, the GBW and open-loop DC gain are 9.01 MHz and 74.9 dB respectively. In case of TFET based CCII, for the power consumption of 82.3 $$\mu$$W, the 3 dB BW for Voltage and Current transfer gains are 700 MHz and 135 MHz respectively. While for the power consumption of 173 $$\mu$$W, the 3 dB BW for Voltage and Current transfer gains are 1.12 GHz and 226 MHz respectively.

摘要

本文介绍了使用gm /的超低功耗两级运算放大器和第二代电流传输器（CCII）的设计$${\mathrm{一世}}_d$$用于生物医学仪器，无线传感器网络（WSN）等便携式应用的技术。设计的电路基于20 nm隧道场效应晶体管（TFET）。电路使用单电源$$+$$与基于碳纳米管FET（CNTFET）的电路和现有基于TFET的电路相比，它提供0.9 V电压，并在许多领域提供了改进。它与基于CNTFET以及基于TFET的电路的性能特征进行了全面比较。与现有电路相比，在HSPICE中建立的仿真为相同的性能提供了非常低的功耗，并且在相同的功耗下提供了更好的性能。对于基于TFET的运算放大器，功耗为47.1$$\mu$$W，GBW和开环直流增益分别为5.12 MHz和75.9 dB。而功耗为107.1$$\mu$$W，GBW和开环DC增益分别为9.01 MHz和74.9 dB。对于基于TFET的CCII，功耗为82.3$$\mu$$W，电压和电流传输增益的3 dB BW分别为700 MHz和135 MHz。而对于173的功耗$$\mu$$W，电压和电流传输增益的3 dB BW分别为1.12 GHz和226 MHz。