ABSTRACT

The Mathematical formulation and a circuit emulator for memristor having three cross-over points in its transient VI curve, has been reported in this paper. The condition for exhibiting three cross-over (pinch-off) points, coordinates of the cross-over points, cross-over instances and the area enclosed under lobes have been derived from three cross-over memristive equation. Furthermore to verify the mathematical model, a three pinch-off memristor (TPM) emulator employing five operational transconductance amplifiers (OTAs), three grounded resistances and single-grounded capacitance has also been proposed. The use of grounded passive elements confirms the suitability of proposed emulator for on-chip implementation. The presented TPM emulator does not require any external voltage multiplier/IC, which can be considered as the key advantage of this configuration. The electronic tunabilty of proposed emulator can be achieved through biasing voltage. The behaviour of realised emulator is studied by performing simulations in the PSPICE environment using CMOS OTA with 0.18um TSMC technology. The presented OTA-based TPM emulator is also realised by commercially available IC LM13700.

摘要

本文报道了在其瞬态 VI 曲线中具有三个交叉点的忆阻器的数学公式和电路仿真器。显示三个交叉（夹断）点的条件、交叉点的坐标、交叉实例和叶瓣下包围的区域已经从三个交叉忆阻方程推导出来。此外，为了验证数学模型，还提出了采用五个运算跨导放大器 (OTA)、三个接地电阻和单接地电容的三夹断忆阻器 (TPM) 仿真器。接地无源元件的使用证实了所提议的仿真器适用于片上实现。所提供的 TPM 仿真器不需要任何外部电压倍增器/IC，这可以被认为是这种配置的关键优势。所提出的仿真器的电子可调性可以通过偏置电压来实现。通过使用 0.18um TSMC 技术的 CMOS OTA 在 PSPICE 环境中执行仿真来研究已实现的仿真器的行为。所提出的基于 OTA 的 TPM 仿真器也由商用 IC LM13700 实现。