In order to reduce the environmental harm of silicon cutting waste (SCW) and increase the value of the plant fiber, we reported a novel method for swiftly preparing ultrafine SiC crystals by spark plasma-assisted silicon–carbon reaction using pretreatment SCW and sisal fibers as raw materials. At 1650 °C, ultrafine SiC crystals with approximately 200 nm grain size were produced. The ultrafine SiC crystals mainly possessed a lattice fringe spacing of 0.25 nm, equivalent to the inter-planar distance between the 3C–SiC (111) planes. The photoluminescence spectrum of the ultrafine SiC crystals exhibited a significant blue shift, indicating that theses crystals are highly valuable for potential future applications in blue-violet emitting devices.

Graphic Abstract

中文翻译：

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利用硅切屑和生物质快速制备超细SiC晶体

为了减少切屑废料（SCW）的环境危害并提高植物纤维的价值，我们报道了一种新颖的方法，该方法采用预处理的SCW和剑麻纤维通过火花等离子体辅助的硅碳反应快速制备超细SiC晶体。原料。在1650°C，生产出具有约200 nm晶粒尺寸的超细SiC晶体。超细SiC晶体主要具有0.25 nm的晶格条纹间距，等于3C-SiC（111）平面之间的平面间距。超细SiC晶体的光致发光光谱显示出明显的蓝移，表明这些晶体对于蓝紫色发射器件的潜在未来应用具有很高的价值。

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