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Achieving high capacitance from porous boron-doped diamond by tuning the surface termination
Surface & Coatings Technology ( IF 5.4 ) Pub Date : 2021-01-02 , DOI: 10.1016/j.surfcoat.2020.126814
Jian Wang , Zhibing He , Xiulan Tan , Tao Wang , Ling Zhang , Guo Chen , Ning Li , Kai Du

Porous boron-doped diamond (PBDD) electrode with a high potential window, excellent stability, controllable conductivity, enhanced specific area, and tunable surface termination is a promising electrode material for the candidate. The surface termination of the PBDD electrode is easily tuned by the cyclic voltammetry (CV) scanning process with a positive potential, and an oxygen-terminated (OT) surface is achieved. The OT PBDD electrode exhibits a peak specific capacitance of 20.31 mF cm−2 (38.3% increase compared with the HT PBDD electrode, at 100 mV s−1) when 2.4 V (vs. Ag/AgCl) potential is applied, and it further comes to 36.74 mF cm−2 (81.8% increase than the HT PBDD electrode, at 10 mV s−1) with a 2.7 V (vs. Ag/AgCl) polarization potential. As the polarization voltage further increases to 3.0 V (vs. Ag/AgCl) or higher, the specific capacitance decrease. The OT PBDD electrode also keeps capacitance retention of 94.8% after 6000 CV cycles at 200 mV s−1. Moreover, we built up a symmetric device using the OT PBDD as the electrode, which exhibits good electrochemical performance, such as wide potential, high energy density (15.1 Wh kg−1), and high power density (4.05 kW kg−1).



中文翻译:

通过调整表面终端,从掺硼多孔金刚石中获得高电容

多孔硼掺杂金刚石(PBDD)电极具有高电势窗口,出色的稳定性,可控制的电导率,增加的比表面积和可调节的表面终止能力,是候选的有希望的电极材料。PBDD电极的表面端接可通过循环伏安(CV)扫描过程轻松地以正电位进行调整,从而获得氧封端(OT)表面。当施加2.4 V(vs. Ag / AgCl)电位时,OT PBDD电极的峰值比电容为20.31 mF cm -2(与HT PBDD电极相比,在100 mV s -1处增加38.3%),并且进一步在10 mV s -1时达到36.74 mF cm -2(比HT PBDD电极增加81.8%),极化电位为2.7 V(vs. Ag / AgCl)。随着极化电压进一步增加到3.0 V(vs. Ag / AgCl)或更高,比电容降低。OT PBDD电极在200 mV s -1下经过6000 CV循环后,还能保持94.8%的电容保持率。此外,我们构建了一种以OT PBDD作为电极的对称器件,该器件具有良好的电化学性能,如宽电势,高能量密度(15.1 Wh kg -1)和高功率密度(4.05 kW kg -1)。

更新日期:2021-01-11
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