This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have been compared with conventional FinFET and GAA FinFET. It has been observed that in comparison to conventional FinFET, leakage current (I_off) reduces by almost thirty times for the GS-GAA FinFET configuration. Thus, revamping the threshold voltage (V_th), switching ratio (I_on/I_off), and subthreshold slope (SS) of the proposed device. Also, major analog parameters like transconductance (g_m), transconductance generation factor (TGF) enhances considerably with early voltage (V_EA) and intrinsic gain (A_v) increased by over two times in magnitude for the GS-GAA FinFET configuration. Furthermore, several important RF parameters have been explored, and the outcome of the study is that the GS-GAA FinFET configuration shows superior RF performance. In GS-GAA FinFET configuration, the gain frequency product (GFP) and gain transconductance frequency product (GTFP) amplified by over two times in magnitude with minimal decrease in the cut-off frequency (f_T) and maximum oscillation frequency (f_max). Thus, the proposed GS-GAA FinFET device can be looked upon as an appealing option for high-frequency analog/RF applications.

这项工作提出了无结累积模式（JAM）栅堆叠栅全能（GS-GAA）FinFET的模拟和RF性能评估，并将获得的结果与常规FinFET和GAA FinFET进行了比较。已经观察到，与常规FinFET相比，GS-GAA FinFET配置的泄漏电流（I _off）降低了近30倍。因此，修改了所提出装置的阈值电压（V _th），开关比（I _on / I _off）和亚阈值斜率（SS）。此外，主要的模拟参数，如跨导（g _m），跨导生成因子（TGF）随早期电压（V _EA）和固有增益（A _v对于GS-GAA FinFET配置，其幅度增加了两倍以上。此外，已经探索了几个重要的RF参数，并且研究结果是GS-GAA FinFET配置显示了出色的RF性能。在GS-GAA FinFET配置中，增益频率乘积（GFP）和增益跨导频率乘积（GTFP）的幅度放大了两倍以上，同时截止频率（f _T）和最大振荡频率（f _max）的减小最小。因此，可以将提出的GS-GAA FinFET器件视为高频模拟/ RF应用的理想选择。