A method for growth of highly (100)-oriented aluminum nitride (AlN) thin films on (100) Si substrate, in poor vacuum systems, by radio frequency magnetron sputtering was developed. This method allows prediction for near ideal deposition conditions in which high quality films with good stoichiometry Al/N (≈1:1) and low oxygen concentration (< 10%) are produced. During the depositions, the substrate was fed by floating potential. The temperature, the nitrogen flow, RF power and sputtering pressure were fixed, whereas the target-substrate distance and the deposition time were varied. Rutherford backscattering spectroscopy (RBS) measurements estimated film thicknesses of 170 nm, 255 nm, and 480 nm and the amount of oxygen incorporated of 43.32%, 29.80%, and 24.67%, respectively. XRD analysis revealed that films grown with substrate placed near the region of the cathodic sheath are amorphous. However, the other three samples exhibited good crystallinity and orientation (100). Surface properties of the films have been also examined by Fourier transform infrared and Raman spectroscopy. Overall, the characteristics of the obtained highly (100)-oriented AlN films evidence their potential to fabricate surface acoustic wave (SAW) sensing devices.

开发了一种在不良真空系统中通过射频磁控溅射在（100）Si衬底上生长高度（100）取向的氮化铝（AlN）薄膜的方法。该方法可以预测接近理想的沉积条件，在该条件下将生产出具有良好化学计量比的Al / N（≈1：1）和低氧浓度（<10％）的高质量薄膜。在沉积期间，通过浮置电位来给衬底供电。固定温度，氮气流量，RF功率和溅射压力，而改变目标基板的距离和沉积时间。卢瑟福背散射光谱（RBS）测量估计的膜厚度为170 nm，255 nm和480 nm，氧气的掺入量分别为43.32％，29.80％和24.67％。XRD分析表明，将基材放置在阴极鞘区域附近而生长的薄膜是无定形的。但是，其他三个样品表现出良好的结晶度和方向（100）。还通过傅里叶变换红外和拉曼光谱检查了膜的表面性能。总体而言，获得的高度（100）取向的AlN薄膜的特性证明了其在制造表面声波（SAW）传感设备方面​​的潜力。