With advancement in photovoltaic technology solar devices matured and the current trend indulge a requisite to elevate device performance by power conversion efficiency and is the focus of recent solar research. Present photovoltaic technology is dominated by solar cell based on silicon wafer with active graphene layer, but these conventional devices are not able to deliver required efficiency to meet the global standards to substitute energy sources. Hence, stands the need therefore a stand alone graphene/Al/Ga/GaAs/GaAs schottky junction solar cell device for enhanced efficiency is developed. The solar photovoltaic device is developed for varied thicknesses of active graphene layer from 100 to 700 nm to estimate and analyse carrier confinement effect at the interface. Additional buffer layer (AlGaAs) is sandwiched between active layer and the GaAs substrate to increase photo generation. The recombination rate is reduced within the active layer due to quantum carrier confinement so that photo generation rate increases leading to high current density. An optimal critical thickness of graphene layer is analysed based on modelling and numerical solution to be at 400 nm. Thereafter, solar cell parameters for 400 nm thick graphene layer are compared with other thickness based devices and similar existing conventional devices of graphene based schottky junction solar cell. The 400 nm thick graphene layered solar cell outperformed existing device with enrichment of 5.26% in fill factor and 17.7% in power conversion efficiency, consequently, demonstrating the device to be the future for the green energy domain.

随着光伏技术的发展，太阳能器件已经成熟，当前的趋势已成为通过功率转换效率提高器件性能的必要条件，并且是最近太阳能研究的重点。当前的光伏技术被基于具有活性石墨烯层的硅晶片的太阳能电池所控制，但是这些常规设备无法提供所需的效率来满足替代能源的全球标准。因此，迫切需要开发用于提高效率的独立的石墨烯/ Al / Ga / GaAs / GaAs肖特基结太阳能电池装置。开发了太阳能光伏器件，用于100到700 nm的不同厚度的活性石墨烯层，以估计和分析界面处的载流子限制效应。额外的缓冲层（AlGaAs）夹在有源层和GaAs基板之间，以增加光的产生。由于量子载流子的限制，在有源层内的复合率降低，从而光生速率增加，导致高电流密度。基于建模和数值解，分析了石墨烯层的最佳临界厚度为400 nm。此后，将400 nm厚石墨烯层的太阳能电池参数与其他基于厚度的器件以及类似的基于石墨烯的肖特基结太阳能电池的现有常规器件进行比较。400纳米厚的石墨烯层状太阳能电池的填充系数高达5.26％，功率转换效率高达17.7％，从而胜过了现有设备，因此证明该设备将成为绿色能源领域的未来。