Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For mid-wave nBn structures, the composition in the absorbing layer was 0.29, and for long-wave nBn structures, this composition was 0.21. The composition in the MBE HgCdTe barrier layers ranged from 0.61 to 0.67. Based on the fabricated HgCdTe nBn structures, test metal–insulator–semiconductor (MIS) devices were created by applying a dielectric Al₂O₃ film with the thickness of about 90 nm. The admittance of test MIS devices was investigated over a wide range of frequencies and temperatures. An equivalent circuit of MIS device based on MBE HgCdTe nBn structure is proposed, which includes the dielectric capacitance, the capacitance and resistance of the barrier layer, and the series resistance of the absorbing layer bulk. It is shown that the values of the equivalent circuit elements are easy to determine from the experimental frequency dependences of admittance in accumulation mode. Comparison of element values for MIS devices based on mid-wave and long-wave nBn structures is carried out.

在GaAs（013）衬底上，通过分子束外延生长了基于HgCdTe的中长波红外nBn结构。对于中波nBn结构，吸收层中的组成为0.29，对于长波nBn结构，该组成为0.21。MBE HgCdTe势垒层中的成分范围为0.61至0.67。基于制造的HgCdTe nBn结构，通过施加电介质Al ₂ O ₃来创建测试金属-绝缘体-半导体（MIS）器件厚度约为90 nm的薄膜。在广泛的频率和温度范围内研究了测试MIS设备的导纳。提出了一种基于MBE HgCdTe nBn结构的MIS器件的等效电路，包括介电电容，势垒层的电容和电阻以及吸收层的串联电阻。结果表明，等效电路元件的值很容易从累积模式下导纳的实验频率依赖性确定。对基于中波和长波nBn结构的MIS设备的元素值进行了比较。