The present work evaluates the effects of plasma power and oxygen mixing ratios (OMRs) on structural, morphological, optical, and electrical properties of strontium titanate SrTiO_x (STO) thin films. STO thin films were grown by magnetron sputtering, and later thermal annealing at 700°C for 1 h was applied to improve film properties. X‐ray diffraction analysis indicated that as‐deposited films have amorphous microstructure independent of deposition conditions. The films deposited at higher OMR values and later annealed also showed amorphous structure while the films deposited at lower OMR value and annealed have nanocrystallinity. In addition, all as‐deposited films were highly transparent (~80%–85%) in the visible spectrum and exhibited well‐defined main absorption edge, while the annealing improved transparency (90%) within the same spectrum. The calculated direct and indirect optical band gaps for films were in the range of 3.60‐4.30 eV as a function of deposition conditions. The refractive index of the films increased with OMRs and the postdeposition annealing. The frequency dependent capacitance measurements at 100 kHz were performed to obtain film dielectric constant values. High dielectric constant values reaching up to 100 were obtained. All STO samples exhibited more than 2.5 μC/cm² charge storage capacity and low dielectric loss (less than 0.07 at 100 kHz). The leakage current density was relatively low (3 × 10⁻⁸Acm⁻² at +0.8 V) indicating that STO films are promising for future dynamic random access memory applications.

中文翻译：

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纳米结构SrTiOx薄膜的电光性能：等离子功率，Ar / O2比和退火的影响

本工作评估了等离子体功率和氧气混合比（OMR）对钛酸锶SrTiO _x的结构，形态，光学和电学性质的影响。（STO）薄膜。通过磁控溅射法生长STO薄膜，然后在700°C进行1h的热退火以改善膜的性能。X射线衍射分析表明，沉积后的薄膜具有无定形的微观结构，与沉积条件无关。以较高的OMR值沉积并随后退火的膜也显示出非晶态结构，而以较低的OMR值沉积并退火的膜具有纳米结晶度。此外，所有沉积的薄膜在可见光谱中都是高度透明的（〜80％–85％），并显示出明确的主吸收边缘，而退火改善了同一光谱中的透明性（90％）。根据沉积条件，薄膜的直接和间接光学带隙计算值在3.60-4.30 eV的范围内。薄膜的折射率随OMR和沉积后退火而增加。在100 kHz下进行频率相关的电容测量，以获得薄膜介电常数值。获得高达100的高介电常数值。所有STO样品均显示超过2.5μC/ cm^2个电荷存储容量和低介电损耗（在100 kHz时小于0.07）。泄漏电流密度相对较低（在+0.8 V时为3×10 ^-8 Acm ^-2），这表明STO膜有望用于未来的动态随机存取存储器应用。