Si PN junction (p-Si/n-Si) photodetectors have been widely used in the near-infrared band. In this paper, the original p-Si is replaced by graphene to form a Gr/n-Si Schottky junction photodetector. Due to the excellent photoelectric properties of graphene, the incident light can irradiate the depletion region of the Schottky junction to generate more photo-generated carriers and has a higher barrier height, which corresponds to large electric field, and accelerates the photogenerated carriers to the electrodes, resulting in the effective collection of photogeneration of charges. The experimental results show that the Gr/n-Si Schottky junction photodetector has better performance. Under the illumination of 808 nm laser lamp, the I–V characteristic of the device was measured, the dark current of Gr/n-Si Schottky junction photodetector has reduced by two orders of magnitude, while the photocurrent was improved, the barrier height reaches 0.938$eV$, and the quantum efficiency increases to 71%. Besides, the light responsivity and detectivity are significantly improved to about 0.456$A/W$ and $7.96\times {10}^{11}cmH{z}^{1/2}{W}^{-1}$ compared with the p-Si/n-Si photodetector.

Si PN结（p-Si / n-Si）光电探测器已广泛用于近红外波段。在本文中，原始的p-Si被石墨烯替代，形成了Gr / n-Si肖特基结光电探测器。由于石墨烯的优异光电性能，入射光可以照射肖特基结的耗尽区以生成更多的光生载流子，并且具有较高的势垒高度，这对应于大电场，并将光生载流子加速到电极，从而有效收集了光生电荷。实验结果表明，Gr / n-Si肖特基结光电探测器具有更好的性能。在808 nm激光灯的照射下，测量了设备的I–V特性，$ËV$，量子效率提高到71％。此外，光响应率和探测率也显着提高至约0.456$\mathrm{一种}/\mathrm{w\; ^}$ 和 $7.96\times {10}^{11}C米H{ž}^{\mathrm{1个}/2}{\mathrm{w\; ^}}^{-\mathrm{1个}}$ 与p-Si / n-Si光电探测器相比。

Si PN结（p-Si / n-Si）光电探测器已广泛用于近红外波段。在本文中，原始的p-Si被石墨烯替代，形成了Gr / n-Si肖特基结光电探测器。由于石墨烯的优异光电性能，入射光可以照射肖特基结的耗尽区以生成更多的光生载流子，并且具有较高的势垒高度，这对应于大电场，并将光生载流子加速到电极，从而有效收集了光生电荷。实验结果表明，Gr / n-Si肖特基结光电探测器具有更好的性能。在808 nm激光灯的照射下，测量了设备的I–V特性，$ËV$，量子效率提高到71％。此外，光响应率和探测率也显着提高至约0.456$\mathrm{一种}/\mathrm{w\; ^}$ 和 $7.96\times {10}^{11}C米H{ž}^{\mathrm{1个}/2}{\mathrm{w\; ^}}^{-\mathrm{1个}}$ 与p-Si / n-Si光电探测器相比。

Si PN结（p-Si / n-Si）光电探测器已广泛用于近红外波段。在本文中，原始的p-Si被石墨烯替代，形成了Gr / n-Si肖特基结光电探测器。由于石墨烯的优异光电性能，入射光可以照射肖特基结的耗尽区以生成更多的光生载流子，并且具有较高的势垒高度，这对应于大电场，并将光生载流子加速到电极，从而有效收集了光生电荷。实验结果表明，Gr / n-Si肖特基结光电探测器具有更好的性能。在808 nm激光灯的照射下，测量了设备的I–V特性，$ËV$，量子效率提高到71％。此外，光响应率和探测率也显着提高至约0.456$\mathrm{一种}/\mathrm{w\; ^}$ 和 $7.96\times {10}^{11}C米H{ž}^{\mathrm{1个}/2}{\mathrm{w\; ^}}^{-\mathrm{1个}}$ 与p-Si / n-Si光电探测器相比。