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A comparative between CdS and CdSe quantum dots doped manganese for photovoltaic enhancement
Optical and Quantum Electronics ( IF 3.3 ) Pub Date : 2021-01-01 , DOI: 10.1007/s11082-020-02647-4
Ha Thanh Tung , Dang Huu Phuc

In this study, we report the fabrication of the photovoltaic devices based on CdS/CdSe multilayer photoanodes, in which Mn 2+ ions were doped into CdS or CdSe quantum dots with the doping concentrations in the range of 5% to 40%. The optical, photovoltaic and electrochemical properties of the quantum dots sensitized Solar cells were found to be optimized for 30% Mn 2+ doping concentration with the thickness of CdSe:Mn 2+ film at 3 cycles, and the efficiency performance of 3.9%.

中文翻译:

用于光伏增强的 CdS 和 CdSe 量子点掺杂锰的比较

在这项研究中,我们报告了基于 CdS/CdSe 多层光阳极的光伏器件的制造,其中 Mn 2+ 离子被掺杂到 CdS 或 CdSe 量子点中,掺杂浓度在 5% 到 40% 的范围内。发现量子点敏化太阳能电池的光学、光伏和电化学性能在 30% Mn 2+ 掺杂浓度下进行了优化,CdSe:Mn 2+ 薄膜的厚度在 3 次循环时得到了优化,效率性能为 3.9%。
更新日期:2021-01-01
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