This study investigates the differences in electron transport properties between metallic, semiconducting and topological insulator nanoribbons (NRs). Using non-equilibrium Green’s function (NEGF) formalism, we have considered transport of edge states in four different scenarios. Metallic NRs show Klein tunneling in the presence of barrier. Topological insulator NRs show Klein tunneling in the presence of barrier and robust transport in the presence of ‘Cut’ and edge roughness. As expected, the semiconducting NRs do not show any special transport property.

中文翻译：

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二维六方晶格金属，半导体和拓扑绝缘体纳米带中边缘态传输的比较

这项研究调查了金属，半导体和拓扑绝缘体纳米带（NRs）之间电子传输特性的差异。使用非平衡格林函数（NEGF）形式主义，我们考虑了四种不同情况下边缘状态的传输。金属NRs在存在势垒的情况下显示出Klein隧穿。拓扑绝缘体NRs在存在障碍的情况下显示出Klein隧穿，在存在“剪切”和边缘粗糙度的情况下显示出稳健的传输。不出所料，半导体NR没有显示任何特殊的传输特性。