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Impacts of core gate thickness and Ge content variation on the performance of Si 1−x Ge x source/drain Si–nanotube JLFET
Journal of Computational Electronics ( IF 2.2 ) Pub Date : 2021-01-02 , DOI: 10.1007/s10825-020-01618-y
Anchal Thakur , Rohit Dhiman

In this paper, we investigate the impacts of variation in the core gate thickness and germanium content on the performance of a Si1−xGex source/drain Si-nanotube junctionless field-effect transistor. A SiGe source/drain structure is combined with a core gate inside the nanotube to address and suppress the stringent issue of short-channel effects (SCEs). The effect of gate length, bias voltages, and Ge content on the subthreshold current, threshold voltage, and SCEs has also been studied by developing a compact analytical model including the quantum confinement effect. Our results highlight the utility of core gate and Si1−xGex source/drain to provide an additional degree of freedom to control SCEs in the nanoscale regime.



中文翻译:

芯栅厚度和锗含量变化对Si 1-x Ge x源/漏Si-纳米管JLFET性能的影响

在本文中,我们研究了核心栅极厚度和锗含量的变化对Si 1- x Ge x源/漏Si-纳米管无结场效应晶体管性能的影响。SiGe源/漏结构与纳米管内的核心栅结合在一起,以解决和抑制短沟道效应(SCE)的严格问题。通过建立包括量子约束效应的紧凑型分析模型,还研究了栅极长度,偏置电压和Ge含量对亚阈值电流,阈值电压和SCE的影响。我们的结果突出了核心栅极和Si 1- x Ge x的效用 源/漏极提供了更大的自由度,可以在纳米范围内控制SCE。

更新日期:2021-01-02
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