In this paper, we investigate the impacts of variation in the core gate thickness and germanium content on the performance of a Si_1−xGe_x source/drain Si-nanotube junctionless field-effect transistor. A SiGe source/drain structure is combined with a core gate inside the nanotube to address and suppress the stringent issue of short-channel effects (SCEs). The effect of gate length, bias voltages, and Ge content on the subthreshold current, threshold voltage, and SCEs has also been studied by developing a compact analytical model including the quantum confinement effect. Our results highlight the utility of core gate and Si_1−xGe_x source/drain to provide an additional degree of freedom to control SCEs in the nanoscale regime.

在本文中，我们研究了核心栅极厚度和锗含量的变化对Si _{1- x} Ge _x源/漏Si-纳米管无结场效应晶体管性能的影响。SiGe源/漏结构与纳米管内的核心栅结合在一起，以解决和抑制短沟道效应（SCE）的严格问题。通过建立包括量子约束效应的紧凑型分析模型，还研究了栅极长度，偏置电压和Ge含量对亚阈值电流，阈值电压和SCE的影响。我们的结果突出了核心栅极和Si _{1- x} Ge _x的效用 源/漏极提供了更大的自由度，可以在纳米范围内控制SCE。