This paper demonstrates highly efficient GaN high-electron-mobility transistors (HEMTs) on GaN substrates with reduced interface contamination. By applying a hydrofluoric acid-based pre-growth treatment to a GaN substrate, the Si impurity concentration at the interface between the GaN substrate and the epitaxial layer can successfully be reduced. RF performance was enhanced by pre-growth treatment owing to the suppression of Si-induced parasitic loss. As a result, GaN HEMTs on GaN substrates exhibited an excellent power-added efficiency of 82.8% at a 2.45GHz. To the best of our knowledge, this exceeds that of the previously reported discrete GaN HEMTs at around this frequency range.

本文演示了在GaN衬底上具有减少的界面污染的高效GaN高电子迁移率晶体管（HEMT）。通过对GaN衬底进行基于氢氟酸的预生长处理，可以成功地降低GaN衬底与外延层之间的界面处的Si杂质浓度。由于抑制了硅引起的寄生损耗，预生长处理提高了射频性能。结果，GaN衬底上的GaN HEMT在2.45 GHz频率下具有82.8％的出色功率附加效率。据我们所知，在该频率范围附近，这已经超过了先前报道的分立式GaN HEMT。