This letter reports a Pd/MoS ₂ /rGO/CuO/ITO structure based Metal-Semiconductor-Metal (MSM) photodetector. The proposed MSM device is obtained by vertical integration of a Pd/MoS ₂ Schottky junction and a CuO /ITO (i.e., (Indium-doped Tin Oxide) Schottky junction separated by thin reduced graphene oxide (rGO) layer. The rGO layer is used to improve the quality of the MoS ₂ layer by mitigating the effects of both the lattice mismatching and van der Waals gap between the MoS ₂ (Molybdenum disulphide) and CuO (Copper Oxide) layer. The proposed photodetector shows a UV-Visible dual-band photoresponse when the device is illuminated by a monochromatic light intensity of $13.6~\mu $ W/cm ² at different wavelengths over 300-800 nm. Excellent responsivities and detectivities of 646.8 A/W and $7.28\times 10 ^{14}$ Jones at ~300 nm (in the UV region) and; of 84.32 A/W and $9.6\times 10 ^{13}$ Jones at ~ 498 nm (in the visible region) are measured at 1 V bias voltage, respectively. Also, the device also shows exceptionally high external quantum efficiency (EQE) of $2.6\times 10 ^{5}$ % and $3.7\times 10 ^{4}$ % at 300 nm and 498 nm, respectively.

中文翻译：

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基于MoS ₂，rGO和CuO纳米复合材料的高性能紫外可见双波段光电探测器

这封信报道了一种基于Pd / MoS ₂ / rGO / CuO / ITO结构的金属-半导体-金属（MSM）光电探测器。所提出的MSM器件是通过垂直集成Pd / MoS ₂肖特基结和被薄氧化还原石墨烯（rGO）层隔开的CuO / ITO（即，铟掺杂的氧化锡）肖特基结垂直集成而获得的 。通过减轻MoS ₂（二硫化钼）和CuO（氧化铜）层之间的晶格失配和范德华间隙的影响来改善MoS ₂层 的质量，该 光电探测器显示了紫外可见双波段当设备被单色光强度照亮时的光响应 $ 13.6〜\亩$ W / cm ²在300-800 nm范围内的不同波长。646.8 A / W和 $ 7.28 \次10 ^ {14} $ 琼斯在〜300 nm（在UV区）和; 84.32 A / W和 $ 9.6 \乘以10 ^ {13} $ 分别在1 V偏置电压下测量〜498 nm（在可见光区域）的琼斯。此外，该器件还具有极高的外部量子效率（EQE） $ 2.6 \乘以10 ^ {5} $ ％和 $ 3.7 \乘以10 ^ {4} $ 分别在300 nm和498 nm下的％。