This letter reports a Pd/MoS2/rGO/CuO/ITO structure based Metal-Semiconductor-Metal (MSM) photodetector. The proposed MSM device is obtained by vertical integration of a Pd/MoS2 Schottky junction and a CuO /ITO (i.e., (Indium-doped Tin Oxide) Schottky junction separated by thin reduced graphene oxide (rGO) layer. The rGO layer is used to improve the quality of the MoS2 layer by mitigating the effects of both the lattice mismatching and van der Waals gap between the MoS2 (Molybdenum disulphide) and CuO (Copper Oxide) layer. The proposed photodetector shows a UV-Visible dual-band photoresponse when the device is illuminated by a monochromatic light intensity of 13.6μ W/cm2 at different wavelengths over 300-800 nm. Excellent responsivities and detectivities of 646.8 A/W and 7.28 x 1014 Jones at ~300 nm (in the UV region) and; of 84.32 A/W and 9.6 x 1013 Jones at ~498 nm (in the visible region) are measured at 1 V bias voltage, respectively. Also, the device also shows exceptionally high external quantum efficiency (EQE) of 2.6 x 105 % and 3.7 x 104 % at 300 nm and 498 nm, respectively.

中文翻译：

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基于 MoS2、rGO 和 CuO 纳米复合材料的高性能紫外-可见双波段光电探测器


这封信报道了一种基于 Pd/MoS2/rGO/CuO/ITO 结构的金属-半导体-金属 (MSM) 光电探测器。所提出的 MSM 器件是通过将 Pd/MoS2 肖特基结和 CuO /ITO（即（掺铟锡氧化物）肖特基结）垂直集成而获得的，该结被薄的还原氧化石墨烯 (rGO) 层隔开。rGO 层用于通过减轻 MoS2（二硫化钼）和 CuO（氧化铜）层之间的晶格失配和范德华间隙的影响来提高 MoS2 层的质量。所提出的光电探测器在该器件在 300-800 nm 范围内的不同波长下以 13.6μ W/cm2 的单色光强度进行照明，在 ~300 nm（紫外区域）下具有 646.8 A/W 和 7.28 x 1014 Jones 的出色响应度和检测率；在 1 V 偏置电压下测得的约 498 nm 处的 A/W 和 9.6 x 1013 琼斯分别为 2.6 x 105 % 和 3.7。在 300 nm 和 498 nm 处分别为 x 104 %。