The optical properties of nonpolar AlGaN multiple quantum wells (MQWs) emitting at 280 nm were investigated intensively using temperature-dependent and time-resolved photoluminescence spectra associated with the characterization of structural properties. The densities of superficial pits and basal-plane stacking faults (BSFs) were reduced by 33.8% and 35.9%, respectively, for nonpolar AlGaN MQWs due to the carefully optimized dual nitridation. It was found that the nonpolar MQWs emission can be significantly improved by reducing the BSFs density as the BSFs emission was the main competing channels. Moreover, an internal quantum efficiency of 39% for nonpolar Al _0.43 Ga _0.57 N MQWs at emission wavelength of 279 nm was achieved even the full width at half maximum values of X-ray rocking curves were 0.565° for c -direction and 0.797° for m -direction. This fact means that a highly efficient deep ultraviolet light sources can be expected by means of nonpolar AlGaN due to the elimination of quantum confined Stark effect induced the decrease in radiative lifetime.

中文翻译：

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基于非极性AlGaN的多个量子阱在280 nm处发射的改进的光学性质

使用与结构特性表征相关的温度依赖性和时间分辨的光致发光光谱，深入研究了在280 nm处发射的非极性AlGaN多量子阱（MQW）的光学特性。由于精心优化的双重氮化，非极性AlGaN MQW的表面凹坑和基面堆叠断层（BSF）的密度分别降低了33.8％和35.9％。发现通过降低BSFs密度可以显着改善非极性MQWs的发射，因为BSFs的发射是主要的竞争通道。此外，对于非极性Al _0.43 Ga _0.57，内部量子效率为39％ 即使X射线摇摆曲线的一半最大值的全宽为0.565°，在279 nm的发射波长处也能达到N MQW。 C 方向和0.797° 米 -方向。这一事实意味着，由于消除了量子限制的斯塔克效应而导致的辐射寿命降低，因此可以通过非极性AlGaN期待高效的深紫外光源。