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Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
IEEE Photonics Journal ( IF 2.1 ) Pub Date : 2020-12-17 , DOI: 10.1109/jphot.2020.3045218
Steffan Gwyn , Scott Watson , Thomas Slight , Martin Knapp , Shaun Viola , Pavlo Ivanov , Weikang Zhang , Amit Yadav , Edik Rafailov , Mohsin Haji , Kevin E Doherty , Szymon Stanczyk , Szymon Grzanka , Piotr Perlin , Stephen P Najda , Mike Leszczyski , Anthony E Kelly

This paper uses a parameter extraction method to investigate key parameters in GaN-based DFBs, as well as spectral linewidth measurements. Single-wavelength blue laser diodes are becoming a topic of significant research interest and gaining a better understanding of the device performance will allow improvements in design and ultimately improve their use in a number of commercial applications. To the authors’ knowledge this is the first reporting of these parameters in GaN devices.

中文翻译:


InGaN/GaN 激光二极管的动态器件特性和线宽测量



本文使用参数提取方法研究 GaN 基 DFB 的关键参数以及光谱线宽测量。单波长蓝色激光二极管正在成为一个重要的研究兴趣主题,更好地了解器件性能将有助于改进设计并最终改善其在许多商业应用中的使用。据作者所知,这是 GaN 器件中这些参数的首次报告。
更新日期:2020-12-17
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