A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed considering the explicit contribution of effects at the metal–graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a deembedding process, and extrinsic parameters of the circuit is considered. The experimental high-frequency performance of three devices from two different GFET technologies is properly described by the proposed small-signal circuit. Some model parameters scale with the device footprint. The correct detachment of contact resistances from the internal transistor enables to assess their impact on the intrinsic cutoff frequency of the studied devices.

中文翻译：

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考虑接触电阻显性贡献的小信号 GFET 等效电路

考虑到金属-石墨烯界面处通过接触电阻产生的效应的显着贡献，提出了石墨烯场效应晶体管（GFET）的小信号等效电路。考虑了一种将接触电阻与通过去嵌入过程获得的内在参数和电路的外在参数分开的方法。所提出的小信号电路正确描述了来自两种不同 GFET 技术的三种器件的实验高频性能。一些模型参数随设备占用空间而变化。接触电阻与内部晶体管的正确分离能够评估它们对所研究器件的固有截止频率的影响。