A high-power dual-wideband GaN power amplifier (PA), which features a filter-based input diplexer and a transformer-combined load, has been proposed in this study. The diplexer realized by low-/high-pass filters presents a high dual-band isolation (>15 dB) and can arbitrarily select the location of the two widely spaced bands. Instead of using a diplexer in the output matching network (OMN), a transformer-combined load design has been proposed to simplify the OMN design. The transformer can effectively minimize the loading effect from each other branch, but does not obviously influence the optimal output impedance. The designed PA can operate in either $Ku$ -or $Ka$ -band mode. In the $Ku$ -band mode, an output power more than 40 dBm and a power-added efficiency (PAE) more than 35% are obtained at 13.5–18 GHz. In the $Ka$ -band mode, the output power more than 30 dBm and the PAE more than 17.5% are obtained at 33–38 GHz. The gain in the $Ku$ - and $Ka$ -band modes is more than 30 and 13 dB, respectively.

中文翻译：

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具有高输入隔离和变压器组合负载设计的高功率 Ka/ Ku 双宽带 GaN 功率放大器

本研究提出了一种高功率双宽带 GaN 功率放大器 (PA)，其具有基于滤波器的输入双工器和变压器组合负载。由低通/高通滤波器实现的双工器具有较高的双频段隔离度（>15 dB），可以任意选择两个间隔较宽的频段的位置。代替在输出匹配网络 (OMN) 中使用双工器，已经提出了变压器组合负载设计以简化 OMN 设计。变压器可以有效地减少来自其他支路的负载效应，但不会明显影响最佳输出阻抗。设计的 PA 可以在以下任一模式下运行 $Ku$ -或者 $K$ -波段模式。在里面 $Ku$ -band 模式，在 13.5–18 GHz 下获得超过 40 dBm 的输出功率和超过 35% 的功率附加效率 (PAE)。在里面 $K$ -band 模式下，在 33–38 GHz 下获得了超过 30 dBm 的输出功率和超过 17.5% 的 PAE。中的收益 $Ku$ - 和 $K$ -band 模式分别超过 30 和 13 dB。