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A Wideband SiGe Power Amplifier Using Modified Triple Stacked-HBT Cell
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2021-01-01 , DOI: 10.1109/lmwc.2020.3040352
Nguyen L. K. Nguyen , Bao-Toan Nguyen , Toshi Omori , Duy P. Nguyen , Ray Moroney , Stefano D'Agostino , Wayne Kennan , Anh-Vu Pham

This letter presents a linear wideband differential optical driver amplifier in a 90-nm silicon germanium (SiGe) bipolar-complementary-metal-oxide-semiconductor (BiCMOS) process. The amplifier utilizes a modified triple-stacked heterojunction bipolar transistor (HBT) topology with emitter degeneration to achieve high output voltage swing and high linearity. The amplifier achieves 13.2-dB voltage gain with a bandwidth from dc to 53 GHz. The amplifier can deliver a 4-V peak-to-peak differential ( $V_{\mathrm {ppd}}$ ) with a total harmonic distortion (THD) of 1.6% at 1 GHz. The amplifier consumes 630-mW dc power at the small-signal operation.

中文翻译:

使用改进的三重堆叠 HBT 单元的宽带 SiGe 功率放大器

这封信展示了一种采用 90 纳米硅锗 (SiGe) 双极互补金属氧化物半导体 (BiCMOS) 工艺的线性宽带差分光驱动放大器。该放大器采用改进的三重堆叠异质结双极晶体管 (HBT) 拓扑和发射极退化,以实现高输出电压摆幅和高线性度。该放大器在 dc 至 53 GHz 的带宽下实现了 13.2 dB 的电压增益。该放大器可提供 4V 峰峰值差分 ($V_{\mathrm {ppd}}$),1 GHz 下的总谐波失真 (THD) 为 1.6%。放大器在小信号运行时消耗 630mW 直流功率。
更新日期:2021-01-01
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