This letter presents a fully integrated three-stage single-ended $D$ -band power amplifier (PA) designed in 0.13- $\mu \text{m}$ silicon–germanium (SiGe) BiCMOS technology. Several bandwidth extension techniques and matching networks are mutually exploited to maximize Bandwidth (BW) performance while assuring unconditional stability. Its measured 3-dB bandwidth covers the entire $D$ -band (110–170 GHz). The PA has a small-signal peak gain of 21 dB at 151 GHz. Its saturated output power ( $P_{\mathrm{ sat}}$ ) in the $D$ -band varies from 11.8 to 13.9 dBm and its output referred 1-dB compression point (OP_{1 dB}) from 9.2 to 12.5 dBm within the $D$ -band. The presented amplifier occupies $0.65\times 0.47$ mm² (including pads) and draws a current of 115 mA from a 3.3-V supply. To the best of our knowledge, these performances represent the state of the art in silicon technology with a minimum ( $P_{\mathrm{ sat}}$ ) of 11.8 dBm and (OP_{1 dB}) of 9.2 dBm covering the entire $D$ -band.

中文翻译：

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在 130-nm SiGe 中具有 13.5-dBm Psat 的宽带 110-170-GHz 交错调谐功率放大器

这封信提出了一个完全集成的三级单端 $D$ -频段功率放大器（PA）设计于 0.13- $\mu \text{m}$ 硅锗 (SiGe) BiCMOS 技术。几种带宽扩展技术和匹配网络相互利用，以最大限度地提高带宽 (BW) 性能，同时确保无条件稳定性。其测量的 3-dB 带宽覆盖了整个 $D$ -频段（110–170 GHz）。PA 在 151 GHz 下具有 21 dB 的小信号峰值增益。其饱和输出功率（ $P_{\mathrm{ sat}}$ ） 在里面 $D$ -band 从 11.8 到 13.9 dBm 变化，其输出参考 1-dB 压缩点 (OP _{1 dB} ) 从 9.2 到 12.5 dBm $D$ -乐队。所提出的放大器占据 $0.65\乘以 0.47$ mm ²（包括焊盘）并从 3.3V 电源汲取 115mA 的电流。据我们所知，这些性能代表了硅技术的最先进水平，最低（ $P_{\mathrm{ sat}}$ ) 11.8 dBm 和 (OP _{1 dB} ) 9.2 dBm 覆盖整个 $D$ -乐队。