SiO 2 thin films were prepared with radio frequency magnetron sputtering on quartz glass substrates, and the effects of sputtering power on the stoichiometric ratio, microstructure, surface morphology and optical properties of the film within 300–1100 nm were investigated. The molar ratio of O/Si in the film increased continuously from 1.87 to 1.99, very close to the ideal stoichiometric ratio of 2:1 with the sputtering power decreasing from 150 to 60 W. And the surface of SiO 2 thin film became more compact and flatter, and the roughness was significantly reduced. All the SiO 2 films were amorphous, and the power had no obvious effect on the crystalline state of the film. When the sputtering power decreased from 150 to 60 W, the refractive index and absorptivity of SiO 2 film in the range of 300–1100 nm decreased continuously, while the transmittance within 300–1100 nm of the coated quartz glass (hereinafter referred to as the transmittance of film) increased continuously, and the integrated transmittance increased from 92.7 to 93.0%.

中文翻译：

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溅射功率对室温射频磁控溅射SiO2薄膜性能的影响

采用射频磁控溅射法在石英玻璃基板上制备SiO 2 薄膜，研究了溅射功率对300-1100 nm范围内薄膜化学计量比、微观结构、表面形貌和光学性能的影响。薄膜中O/Si的摩尔比从1.87不断增加到1.99，非常接近理想的化学计量比2:1，溅射功率从150下降到60 W。SiO 2 薄膜表面变得更加致密且更平整，粗糙度显着降低。SiO 2 薄膜均为非晶态，功率对薄膜晶态无明显影响。当溅射功率从 150 W 降低到 60 W 时，SiO 2 薄膜在 300-1100 nm 范围内的折射率和吸收率不断降低，