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Progressive advancement of ZnS-based quantum dot LED
Optical and Quantum Electronics ( IF 3.3 ) Pub Date : 2021-01-01 , DOI: 10.1007/s11082-020-02653-6
Laxman Mandal , Vidya , Balram Verma , Jyoti Rani , Piyush K. Patel

Zn 1− x Cd x S 1− y Se y : x , y $$=$$ = 0–1 quantum dots (QDs) have been studied for their unique properties, which are: controllable size synthesis, tunable band gap, high quantum efficiency, narrow full width at half maximum (FWHM), high stability and easily tunable emission wavelength in the visible region. They are widely used for the synthesis of quantum dot light-emitting diodes (QLEDs) for display and lighting applications. In this review, general introduction of the development of ZnCdSSe QDs and their uses, synthesis methods of QLEDs, basic properties of ZnS, ZnSe, CdS, and CdSe QDs, the effect of exposure time and temperature on particle size and band gap, the effect of QDs size on the emission of light, basic terms for efficiency, core/shell structure-based QLEDs and doping of rare earth elements into the ZnCdSSe QDs are described.

中文翻译:

ZnS基量子点LED的进步

Zn 1− x Cd x S 1− y Se y : x , y $$=$$ = 0–1 量子点 (QD) 已被研究为它们独特的性质,即:可控尺寸合成、可调带隙、高量子效率、窄半峰全宽 (FWHM)、高稳定性和可见光区的易于调谐的发射波长。它们广泛用于合成用于显示和照明应用的量子点发光二极管 (QLED)。本综述综述了ZnCdSSe QDs的发展及其用途,QLEDs的合成方法,ZnS、ZnSe、CdS和CdSe QDs的基本性质,暴露时间和温度对粒径和带隙的影响,描述了 QD 大小对光发射的影响、效率的基本术语、基于核/壳结构的 QLED 以及稀土元素掺杂到 ZnCdSSe QD 中。
更新日期:2021-01-01
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