An n-type α-Ga₂O₃ layer was grown by mist chemical vapor deposition on a sapphire substrate, and a Ti/α-Ga₂O₃ Schottky barrier diode was fabricated. Although the α-Ga₂O₃ layer has a high threading dislocation density (larger than 10⁹ cm⁻²), the ideality factor of 1.03 was obtained from the forward current–voltage characteristic in the range of 298 K–423 K, indicating the clear thermionic emission transport. The reverse current–voltage characteristic was also investigated, and the leakage current showed good agreement with the theoretical calculation based on the thermionic field emission model without any fitting parameter in the temperature range of 298 K–423 K.

中文翻译：

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薄雾化学气相沉积生长在异质外延α-Ga2O3上形成的肖特基势垒二极管的无缺陷电流电压特性

一个Ñ型α-嘎₂ ö ₃层在蓝宝石衬底上生长由雾化学气相沉积，和Ti /α -镓₂ ö ₃肖特基势垒二极管被制造的。虽然α-嘎₂ ö ₃层具有高的穿透位错密度（大于10 ⁹厘米^-2），从298 K–423 K范围内的正向电流-电压特性获得了1.03的理想因子，表明了清晰的热电子发射传输。还研究了反向电流-电压特性，并且在298 K–423 K的温度范围内，没有任何拟合参数的情况下，泄漏电流与基于热电子场发射模型的理论计算具有良好的一致性。