Yttrium iron garnet (YIG) is an ideal magnetic insulator for room temperature microwave and spintronic applications. The growth of high‐quality YIG films on substrates other than isostructural Gadolinium gallium garnet (GGG) is a primary requirement to integrate with current semiconductor electronics. Here, we are presenting the growth of highly oriented YIG films on amorphous quartz substrates using pulsed laser deposition. Structural characterization suggests the growth of pure polycrystalline garnet phase with preferred (100) orientation. The 430‐nm thick YIG film shows a saturation magnetization (4πM_S) of 1620 (92% of the bulk value of YIG) with a very small coercive field of 6 Oe and a minimum value for ferromagnetic resonance linewidth of 78 Oe for the magnetic field applied perpendicular to the film plane. Estimated damping constant shows reasonably low value, beneficial for realizing the applications integrated with semiconductor technology. Importantly, the formation of YIG with preferred orientation could unveil enormous opportunities in the preparation of textured or single crystal materials on amorphous substrates.

中文翻译：

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在石英上生长的首选取向多晶Y3Fe5O12薄膜，微波损耗低

钇铁石榴石（YIG）是室温微波和自旋电子应用的理想磁绝缘体。在等结构Ga镓石榴石（GGG）以外的衬底上生长高质量YIG膜是与当前半导体电子器件集成的主要要求。在这里，我们介绍了使用脉冲激光沉积在非晶石英衬底上高取向YIG膜的生长。结构表征表明具有优选的（100）取向的纯多晶石榴石相的生长。的430纳米厚的YIG薄膜示出了饱和磁化强度（4 π中号_小号）为1620（YIG体积值的92％），矫顽场非常小，为6 Oe，对于垂直于胶片平面施加的磁场，铁磁共振线宽的最小值为78 Oe。估计的阻尼常数显示出合理的低值，有利于实现与半导体技术集成的应用。重要的是，具有优选取向的YIG的形成可以揭示在非晶衬底上制备纹理化或单晶材料的巨大机会。