The scope of the present study is to assess through numerical calculations the effect of nanopatterning the photovoltaics (PV) and that of imposing additional superstrate layers to the efficiency of the PV’s, under normal and wide incidence angles. The numerical calculations were performed with the Rigorous Coupled-Wave Analysis (RCWA) method where we examined several types of Si wafers including additional Si₃N₄ and SiO₂ superstrate layers, and periodic patterns of grooves affecting either the superstrates or both the superstrates and Si substrate. A very broad parameter space was investigated (thickness of the superstrates, and the depth, diameter and periodicity constant of hole and pillar-like patterns) from which we derived the optimal set of parameters for each wafer type. The performance of the optimized wafers was then evaluated over a broad range of incident angles. Both the deposition of the superstrates as well as the imposition of periodic patterns improve drastically the absorption efficiency of the wafers and they allow for maintaining the maximum efficiency across the high incidence angle regime.

本研究的范围是通过数值计算来评估在法向入射角和宽入射角下对光伏（PV）进行纳米构图的效果以及对PV的效率施加额外的上覆层的效果。使用严格耦合波分析（RCWA）方法进行了数值计算，在该方法中，我们检查了几种类型的Si晶片，包括附加的Si ₃ N ₄和SiO ₂覆盖层，以及影响覆盖层或覆盖层和Si衬底的沟槽的周期性图案。我们研究了非常广泛的参数空间（覆盖层的厚度，以及孔和柱状图案的深度，直径和周期性常数），从中我们得出了每种晶片类型的最佳参数集。然后在广泛的入射角范围内评估了优化晶片的性能。覆层的沉积以及周期性图案的施加都大大改善了晶片的吸收效率，并且它们允许在整个高入射角范围内保持最大效率。